Here we report a fast and reproducible doping method that involves bubbling a spiro-OMeTAD:LiTFSI solution with CO 2 under ultraviolet light. CO 2 obtains electrons from photoexcited...
Normal n-i-p-type perovskite solar cells (PSCs) incorporating a hole-transporting layer (HTL) 1, 2 with 2,2′,7,7′-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9-spirobifluorene (spiro-OMeTAD) present a promising path for next-generation solar cells 3, 4 and have become the focal point of intensive scientific investigation.
Perovskite solar cells (PSCs) have been widely studied due to high light-absorption the modulation of Fermi energy level of the overall perovskite was abstracted to a change in the perovskite doping strategy, and the photovoltaic (PV) performance of PSCs under different doping conditions of perovskite was systematically investigated. First, uniform
The buried interface between perovskite and the electron transport layer (ETL) played a crucial role in improving the power conversion efficiency (PCE) and stability of n-i-p structured perovskite solar cells (PSCs). Commercially prepared SnO2-based ETL films often suffered from severe interface defects, imp
The physical properties of perovskites—the central components of perovskite solar cells (PSCs)—are crucial for photovoltaic (PV) performance. Suitable doping of
The incorporation of potassium into perovskite solar cells (PSCs) has been empirically validated to mitigate hysteresis phenomena and boost the power conversion efficiency (PCE). However, the doping mechanism of potassium ions in the perovskite film and their effect on photocarrier recombination remains a topic of debate.
Abstract This study utilizes the Solar Cell Capacitance Simulator (SCAPS), a simulation program, to comprehensively investigate the influence of aluminum (Al) doping concentration and thickness variation in the ZnO layer on the performance of perovskite solar cells. The simulated perovskite solar cell (PSC) featured a perovskite layer of CH3NH3PbI3,
It is found that doping can improve the photoluminescence quantum yield by making radiative recombination faster. This effect can benefit, or harm, photovoltaic performance given that the improvement of photoluminescence quantum efficiency and open-circuit voltage is accompanied by a reduction of the diffusion length.
This photo-doping method can prevent unintended oxidation and dopant-mediated degradation due to no additional aging or ion penetration. The photo-doped perovskite solar cell shows far superior operational stability and maintains excellent efficiency under full sun illumination over 1,000 h.
Herein, the recently reported electronic doping of CH 3 NH 3 PbI 3 is employed to fabricate perovskite solar cells in which the interfacial electron transport layer (ETL) is replaced by n-doping of one side of the
Record power conversion efficiencies (PCEs) of perovskite solar cells (PSCs) have been obtained with the organic hole transporter 2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9′-spirobifluorene (spiro-OMeTAD) nventional doping of spiro-OMeTAD with hygroscopic lithium salts and volatile 4-tert-butylpyridine is a time-consuming process and also
Herein, the recently reported electronic doping of CH 3 NH 3 PbI 3 is employed to fabricate perovskite solar cells in which the interfacial electron transport layer (ETL) is replaced by n-doping of one side of the perovskite film.
We developed a new doping strategy for spiro-OMeTAD that avoids post-oxidation by using stable organic radicals as the dopant and ionic salts as the doping modulator (referred to as ion-modulated radical doping). We achieved PCEs of >25% and much-improved device stability under harsh conditions.
This photo-doping method can prevent unintended oxidation and dopant-mediated degradation due to no additional aging or ion penetration. The photo-doped perovskite solar cell shows far superior operational stability
A widely used component of high-efficiency perovskite solar cells (PSCs) is the molecular hole-transport material (HTM) spiro-OMeTAD. This organic solid needs to be p-doped to acquire sufficient hole conductivity. However, the conventional doping method using LiTFSI in the air is slow, sensitive to the environment, and may lead to the
We developed a new doping strategy for spiro-OMeTAD that avoids post-oxidation by using stable organic radicals as the dopant and ionic salts as the doping modulator (referred to as ion-modulated radical doping).
Hybrid perovskite solar cells (PSCs) have advanced rapidly over the last decade, with certified photovoltaic conversion efficiency (PCE) reaching a value of 26.7% 1,2,3,4,5.Many academics are
Normal n-i-p-type perovskite solar cells (PSCs) incorporating a hole-transporting layer (HTL) 1, 2 with 2,2′,7,7′-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9
In this paper, we grew MAPbI 3: K doped thin films using redissolved single crystals as a precursor 28 and studied the effect of K + doping on the electrical and optical properties of perovskite semiconductor single crystals and doped film-based solar cell devices. It was found that K + doping elevates the work function of perovskite and transforms the
The physical properties of perovskites—the central components of perovskite solar cells (PSCs)—are crucial for photovoltaic (PV) performance. Suitable doping of perovskites can improve the electric-field distribution within them, thus enhancing their PV performance. In this study, the effects of the three doping strategies on PV performance
The incorporation of potassium into perovskite solar cells (PSCs) has been empirically validated to mitigate hysteresis phenomena and boost the power conversion
The buried interface between perovskite and the electron transport layer (ETL) played a crucial role in improving the power conversion efficiency (PCE) and stability of n-i-p structured perovskite solar cells (PSCs).
Normal n-i-p-type perovskite solar cells (PSCs) incorporating a hole-transporting layer (HTL) 1, 2 with 2,2′,7,7′-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9-spirobifluorene (spiro-OMeTAD) present a promising path for next-generation solar cells 3, 4 and have become the focal point of intensive scientific investigation. When employing spiro
Revealing the doping density in perovskite solar cells and its impact on device performance Special Collection: Energy Storage and Conversion. Francisco Peña-Camargo. 0000-0002-8402-4266 ; Francisco Peña-Camargo 1. Physik weicher Materie, Institut für Physik und Astronomie, Universität Potsdam, Karl-Liebknecht-Str. 24–25, 14776 Potsdam, Germany.
Doping and/or alloying in the various layers in perovskite solar cells (PSCs) is playing a key role in the success of this new photovoltaic (PV) technology. Here we present a brief review of doping and alloying approaches used to enhance the efficacy of the hybrid organic–inorganic perovskite (HOIP) layer, t
Here we report a fast and reproducible doping method that involves bubbling a spiro-OMeTAD:LiTFSI solution with CO 2 under ultraviolet light. CO 2 obtains electrons from photoexcited...
We have investigated the effect of doping density in the absorber layer, electron transport layer, and hole transport layer on the performance of a device with an FTO/TiO 2 /CsSnI 3 /CuSCN/Au configuration.
It is found that doping can improve the photoluminescence quantum yield by making radiative recombination faster. This effect can benefit, or harm, photovoltaic performance given that the improvement of
Doping and/or alloying in the various layers in perovskite solar cells (PSCs) is playing a key role in the success of this new photovoltaic (PV) technology. Here we present a brief review of doping and alloying approaches
A solar cell device was selected for this first demonstration of doping in a perovskite device due to the large body of knowledge in optimizing their architecture. With the latest record efficiency of the perovskite solar cells (PSC) being 26.1%, they are approaching the Shockley-Queisser limit.
High resistance at the interfaces of perovskite solar cells can be decreased using ionic liquids or ammonium-based passivating layers. These strategies take advantage of the energy level alignment to improve the transport of electrons and holes to the electrical contacts.
The open circuit voltage of the doped solar cells increases proportionally to the doping concentration due to the narrowing of the depletion layer thickness at the interface of the perovskite and the top electrode, reaching the value of ≈1 V for the doped ETL-free device, the same as for the reference sample.
The doping in perovskite materials alters its optical, electrical, and semiconducting properties , , . In the perovskite materials, the doping may be self-doping or doping by external agent , , . In Sn-based perovskite materials, the oxidation of Sn 2+ ion into Sn 4+ ion works as a p-type dopant .
Very promising results on perovskite p-type doping have been reported by Euvrard et al., but their approach requires the use of perovskite with a high valence band maximum (VBM), such as the mixed-metal MAPb 0.5 Sn 0.5 I 3, which is much more challenging to use for preparing an efficient and stable solar cell device.
Nature 594, 51–56 (2021) Cite this article An Author Correction to this article was published on 03 September 2021 In perovskite solar cells, doped organic semiconductors are often used as charge-extraction interlayers situated between the photoactive layer and the electrodes.
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