Tunable, non-volatile, small-signal capacitance is observed and characterized in a TiN/ferroelectric Hf0.5Zr0.5O2 (HZO)/TiN stack. The non-volatility of the small-signal capacitance originates
These nonvolatile storage elements, such as ferroelectric random access memory (FeRAM), ferroelectric field-effect transistors (FeFETs), and ferroelectric tunnel
In this brief, we first introduce the device properties of the non-volatile capacitor and their underlying physical mechanism. Moving to array-level analysis, we obtain the optimal ratios
Tunable, non-volatile, small-signal capacitance is observed and characterized in a TiN/ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO)/TiN stack. The non-volatility of the small-signal capacitance originates from the non-uniform
DOI: 10.1109/LED.2023.3278599 Corpus ID: 258856731; Capacitive Memory Window With Non-Destructive Read in Ferroelectric Capacitors @article{Mukherjee2023CapacitiveMW, title={Capacitive Memory Window With Non-Destructive Read in Ferroelectric Capacitors}, author={Sayan Mukherjee and Jasper Bizindavyi and Sergiu Clima and Mihaela Ioana
Starting from the basic principles of ferroelectric negative capacitance, we discuss the desirable characteristics of a negative capacitance material, concluding that HfO 2-based ferroelectrics are currently most promising for applications in electronics.
Although Hf-Zr-based ferroelectric capacitors are fabricated with other electrodes, the focus is predominantly directed toward obtaining a large ferroelectric response. The impact of the electrodes on data retention for these ferroelectrics remains underreported and greater insight is needed to improve device reliability. Here, a comprehensive set of electrodes
In this work, we demonstrate a record high non-volatile capacitive MW and non-destructive read in hafnium zirconate-based metal-ferroelectric-metal capacitors (FeCAPs).
Ferroelectric RAM is considered a promising candidate on the quest for a universal memory, but the concept is still problem prone. Here, the authors use the ferroelectric photovoltaic effect as a
and interesting properties such as high permittivity capacitors, ferroelectric non-volatile FeRAM memories, pyroelectric sensors, piezoelectric and transducers, electrooptic and optoelectronic devices, etc. Keywords: dielectrics, ferroelectrics, polarization, piezoelectric, pyroelectric, hysteresis loop, phase transitions 1. Introduction The investigations of dielectrics, ferroelectrics
These nonvolatile storage elements, such as ferroelectric random access memory (FeRAM), ferroelectric field-effect transistors (FeFETs), and ferroelectric tunnel junctions (FTJs), possess different data access mechanisms, individual merits, and specific application boundaries in next-generation memories or even beyond von Neumann
While time-dependent imprint can be associated with the charge injection at the electrode-ferroelectric interface layer and/or the redistribution of oxygen vacancies within the ferroelectric, the root cause of fluid imprint is mainly related to the charge injection into and migration across the (non-ferroelectric) interfacial layer.
Here, the authors propose a two-terminal ferroelectric fin diode non-volatile memory in which a ferroelectric capacitor and a fin-like semiconductor channel are combined
In this work, we demonstrate a record high non-volatile capacitive MW and non-destructive read in hafnium zirconate-based metal-ferroelectric-metal capacitors (FeCAPs).
Single domain nanoparticles are not ferroelectric, but they can be capacitive in the high-frequency region due to the absence of ferroelectric losses. Embedding non-ferroelectric BZN or giant dielectric constant perovskite oxide (BST) nanoparticles in a polymer matrix might be another promising route to achieve low-loss capacitive behavior in
Ferroelectric wurtzite-type aluminum scandium nitride (Al 1−x Sc x N) presents unique properties that can enhance the performance of non-volatile memory technologies. The realization of the full potential of Al 1−x Sc
It leads, on the one hand, to the different phase composition and polarization values, because V O concentration affects the relative stability of ferroelectric and non-ferroelectric phases [16,17]. On the other hand, reliability issues also cannot be independent of the electrode materials and processing conditions.
By incorporating ferroelectric or ferroelectric-like properties into organic materials, it is possible to induce negative differential capacitance where the capacitance decreases with
Henry A. Sodano; High energy density nanocomposite capacitors using non-ferroelectric nanowires. 11 February 2013; 102 (6): 063901. A high energy density nanocomposite capacitor is fabricated by incorporating high aspect ratio functionalized TiO 2 nanowires (NWs) into a polyvinylidene-fluoride matrix.
In the last decade, HfO 2-based ferroelectric capacitors (FeCaps) have undergone significant advancements, particularly within the realm of nonvolatile ferroelectric random access memories (FeRAMs). Nonetheless, the READ operation in FeRAMs is inherently destructive, rendering it unsuitable for neuromorphic computing. In this study, we have
Here, the authors propose a two-terminal ferroelectric fin diode non-volatile memory in which a ferroelectric capacitor and a fin-like semiconductor channel are combined to share both top...
Lead-free Nb-based perovskite ferroelectric/antiferroelectric films have strong orbital hybridization with O 2p orbitals due to unfilled d orbitals of Nb elements, forming a series of energy storage
The ferroelectric characteristics of the ZrO 2 capacitor were also obtained using a series resistor in place of the series capacitor in the circuit shown in Fig. 1c. Characterization results with
Henry A. Sodano; High energy density nanocomposite capacitors using non-ferroelectric nanowires. 11 February 2013; 102 (6): 063901. A high energy density nanocomposite capacitor is fabricated by incorporating
Starting from the basic principles of ferroelectric negative capacitance, we discuss the desirable characteristics of a negative capacitance material, concluding that HfO 2-based ferroelectrics are currently most
In this brief, we first introduce the device properties of the non-volatile capacitor and their underlying physical mechanism. Moving to array-level analysis, we obtain the optimal ratios between reference and ferroelectric capacitors ( Cref/CFE )
Tunable, non-volatile, small-signal capacitance is observed and characterized in a TiN/ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO)/TiN stack. The non-volatility of the small-signal capacitance originates from the non-uniform distribution of oxygen vacancies near/at the bottom electrode, resulting in polarity-dependent responses of the
Lead-free Nb-based perovskite ferroelectric/antiferroelectric films have strong orbital hybridization with O 2p orbitals due to unfilled d orbitals of Nb elements, forming a series of energy storage film materials with potential application value. Here, we provide an overview of the state-of-the-art lead-free Nb-based films for energy storage
By incorporating ferroelectric or ferroelectric-like properties into organic materials, it is possible to induce negative differential capacitance where the capacitance decreases with increase in voltage. This negative capacitance effect can be utilized to overcome the power limitations in organic electronic devices by effectively amplifying
While significant progress has been made in the basic understanding of ferroelectric negative capacitance in recent years, the development of practical devices has seen limited success so far. Here, we present a unique view of the field of negative capacitance electronics from the ferroelectric materials perspective.
This effect is achieved by connecting a ferroelectric material in parallel with a regular capacitor. When a voltage is applied across the ferroelectric material, its polarization opposes the voltage resulting in a net decrease in the voltage across the combination of the ferroelectric and regular capacitors.
a Energy landscape U of a ferroelectric capacitor when no voltage is applied. The capacitance C appears negative when QF = 0. b, c Evolution of the energy landscape when the voltage is applied across the ferroelectric capacitor that is smaller (b) or greater (c) than the coercive voltage V c.
The permittivity of a ferroelectric capacitor is contributed by both the lattice (intrinsic component) and the vibration of domain walls (DW) under a small AC electric field (extrinsic component). 13,14,26 The cross-point for the forward and reverse sweep of a symmetric C–V in a perfect ferroelectric capacitor should be at zero DC voltage.
In summary, stabilizing negative capacitance requires a combination of material engineering, device design, and control strategies to overcome the instabilities so that the desired behavior in ferroelectric materials can be maintained.
Lee et al. (2018) investigated the negative capacitance effect in organic ferroelectric polymers. They demonstrated that by incorporating a ferroelectric polymer layer such as poly (vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) into the gate stack of an organic field-effect transistor (OFET), negative capacitance was observed.
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